MRF966 N-Channel Dual Gate GaAsFET

Sourve DJ7oh
http://www.mydarc.de/dj7oh/fad/halbl/briefm.htm


Top view, clockwise: long lead is drain,  
 source, G1, G2. 

Maximum Ratings:
Vds = 10 V
Vg1s = Vg2s = - 8 V / + 1 V
Id = 60 mA
Pd 0 350 mW
Tj = Tstg = -65 to 125 grdC.

Characteristics at 25 grdC.:
Gate1 to Source Cutoff Voltage at Vds=5V, Vg2s=0 :
   min -2 V, max -4.5 V
Gate2 to Source Cutoff Voltage at Vds=5V, Vg1s=0 :
   min -2 V, max -4.5 V
Idss at Vds=5V, Vg1s=Vg2s=0: min 30mA, typ 50mA, max 80mA
Forward Transfer Admittance at Vds=5V, Vg2s=0, Id=10mA, 1 kHz:
  min 14 mmhos, typ 20 mmhos
Capacitances at Vds=5V, Vg2s=0, Id=10mA, 1 MHz :
  Input : typ 0.45 pF
  Reverse Transfer : typ 0.04 pF
Test at Vds=5V, Vg2s=0, Id=10mA, f=1 GHz : 
  Noise Figure : typ 1.2 dB, max 1.5 dB
  Common Source Power Gain : min 15 dB, typ 18 dB
  Output Power at 1 dB Compression Point: typ 10 dBm
  Intermodulation Distortion 
    at Pin=-40dBm, 995 MHz and 1001 MHz: typ -65 dB
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